| PART |
Description |
Maker |
| TC58NVG1S3ETA00 |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| HYI18T1G400BF-2.5 HYI18T1G400BF-2.5F HYI18T1G800BC |
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.6 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
http://
|
| TC58NVG5T2HTA00 |
32 GBIT (4G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| MX25L25735F MX25L25735FMI10G MX25L25735FZ2I10G |
3V 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L25635E MX25L25635EMI12G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4，银
|
http://
Maxwell Technologies, Inc
|
| NAND01G-B2B NAND01GR3B2CN6E NAND02GR3B2CN6E NAND01 |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| TC58DVG02A1FI0 |
1 Gbit (128M x *8its) CMOS NAND EPROM
|
Toshiba
|
| V23826-K305-C363 V23826-K305-C353 V23826-K305-C373 |
Multimode 850 nm 1.0625 Gbit/s Fibre Channel 1.3 Gigabit Ethernet 1x9 Transceiver 多模850纳米1.0625 Gbit / s的光纤通道1.3千兆以太网收发器1x9
|
Infineon Technologies AG
|
